View MCK500-14IO1_4372981.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

rating report. types m##500-12io1 and m##500-18io1 issue 2 page 1 of 11 march, 2005 ixys date: 17.03.2005 data sheet issue: 2 thyristor/diode modules m## 500 absolute maximum ratings v rrm v drm [v] mcc mcd mdc mca mck mcda mdca 1200 500-12io1 500-12io1 500-12io1 500-12io1 500-12io1 500-12io1 500-12io1 1400 500-14io1 500-14io1 500-14io1 500-14io1 500-14io1 500-14io1 500-14io1 1600 500-16io1 500-16io1 500-16io1 500-16io1 500-16io1 500-16io1 500-16io1 1800 500-18io1 500-18io1 500-18io1 500-18io1 500-18io1 500-18io1 500-18io1 voltage ratings maximum limits units v drm repetitive peak off-state voltage 1) 1200-1800 v v dsm non-repetitive peak off-state voltage 1) 1200-1800 v v rrm repetitive peak reverse voltage 1) 1200-1800 v v rsm non-repetitive peak reverse voltage 1) 1300-1900 v other ratings maximum limits units i t(av)m maximum average on-state current, t c = 89c 2) 500 a i t(av)m maximum average on-state current. t c = 85c 2) 545 a i t(av)m maximum average on-state current. t c = 100c 2) 376 a i t(rms)m nominal rms on-state current, t c = 55c 2) 1294 a i t(d.c.) d.c. on-state current, t c = 55c 1029 a i tsm peak non-repetitive surge t p = 10 ms, v rm = 60%v rrm 3) 16.5 ka i tsm2 peak non-repetitive surge t p = 10 ms, v rm 10v 3) 18.2 ka i 2 ti 2 t capacity for fusing t p = 10 ms, v rm = 60%v rrm 3) 1.3610 6 a 2 s i 2 t i 2 t capacity for fusing t p = 10 ms, v rm 10 v 3) 1.6610 6 a 2 s critical rate of rise of on-state current (repetitive) 4) 150 a/s (di/dt) cr critical rate of rise of on-state current (non-repetitive) 4) 300 a/s v rgm peak reverse gate voltage 5 v p g(av) mean forward gate power 4 w p gm peak forward gate power 30 w v isol isolation voltage 5) 3500 v t vj op operating temperature range -40 to +125 c t stg storage temperature range -40 to +150 c notes: 1) de-rating factor of 0.13% per c is applicable for tv j below 25c. 2) single phase; 50 hz, 180 half-sinewave. 3) half-sinewave, 125c t vj initial. 4) v d = 67% v drm , i fg = 2 a, t r 0.5s, t c = 125c. 5) ac rms voltage, 50 hz, 1min test
ixys thyristor/diode module types m##500-12io1 and m##500-18io1 rating report. types m##500-12io1 and m##500-18io1 issue 2 page 2 of 11 march, 2005 thyristor characteristics parameter min. typ. max. test conditions 1) units v tm maximum peak on-state voltage - - 1.5 i tm = 1700 a v v tm maximum peak on-state voltage - - 1.43 i tm = 1500 a v v t0 threshold voltage - - 0.85 v r t slope resistance - - 0.27 m ? (dv/dt) c r critical rate of rise of off-state voltage 1000 - - v d = 80% v drm , linear ramp, gate o/c v/ s i drm peak off-state current - - 70 rated v drm ma i rrm peak reverse current - - 70 rated v rrm ma v gt gate trigger voltage - - 3.0 v i gt gate trigger current - - 300 t vj = 25c, v d = 10 v, i t = 3 a ma i h holding current - - 1000 t vj = 25c ma t gd gate controlled turn-on delay time - 0.6 1.5 t gt turn-on time - 1.2 2.5 i fg = 2 a, t r = 0.5 s, v d = 67%v drm , i tm = 2000 a, di/dt = 10 a/s, t vj = 25c s q rr recovered charge - 2200 - c q ra recovered charge, 50% chord - 1600 1900 c i rm reverse recovery current - 120 - a t rr reverse recovery time, 50% chord - 25 - i tm = 1000 a, t p = 1 ms, di/dt = 10a/s, v r = 50 v s - 200 - i tm = 1000 a, t p = 1 ms, di/dt = 10 a/s, v r = 50 v, v dr = 80%v drm , dv d r /dt = 20 v/s t q turn-off time - 300 - i tm = 1000 a, t p = 1 ms, di/dt = 10 a/s, v r = 50 v, v dr = 80%v drm , dv d r /dt = 200 v/s s -- 0.062 single thyristor k/w r thjc thermal resistance, junction to case -- 0.031 whole module k/w -- 0.02 single thyristor k/w r thch thermal resistance, case to heatsink -- 0.01 whole module k/w f 1 mounting force (to heatsink) 4.25 - 5.75 nm f 2 mounting force (to terminals) 10.2 - 13.8 2) nm w t weight - 1.5 - kg diode characteristics parameter min. typ. max. test conditions 1) units v fm maximum peak forward voltage - - 0.98 i tm = 1800 a v v t0 threshold voltage - - 0.72 v r t slope resistance - - 0.143 m ? i rrm peak reverse current - - 50 rated v rrm ma q rr recovered charge - 2200 - c q ra recovered charge, 50% chord - 1800 2250 c i rm reverse recovery current - 145 - a t rr reverse recovery time, 50% chord - 25 - i tm = 1000 a, t p = 1ms, di/dt = 10 a/s, v r = 50 v s notes: 1) unless otherwise indicated t vj =125c. 2) screws must be lubricated
ixys thyristor/diode module types m##500-12io1 and m##500-18io1 rating report. types m##500-12io1 and m##500-18io1 issue 2 page 3 of 11 march, 2005 notes on ratings and characteristics 1.0 voltage grade table voltage grade v drm v dsm v rrm v v rsm v v d v r dc v 12 1200 1300 820 14 1400 1500 930 16 1600 1700 1040 18 1800 1900 1150 2.0 extension of voltage grades this report is applicable to other voltage grades when supply has been agreed by sales/production. 3.0 de-rating factor a blocking voltage de-rating factor of 0.13%/c is applicable to this device for t vj below 25c. 4.0 repetitive dv/dt standard dv/dt is 1000v/s. 5.0 snubber components when selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. if required, please consult the factory for assistance. 6.0 rate of rise of on-state current the maximum un-primed rate of rise of on-state current must not exceed 300a/s at any time during turn- on on a non-repetitive basis. for repetitive performance, the on-state rate of rise of current must not exceed 150a/s at any time during turn-on. note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7.0 gate drive the nominal requirement for a typical gate drive is illustrated below. an open circuit voltage of at least 30v is assumed. this gate drive must be applied when using the full di/dt capability of the device. i gm i g t p1 4a/s the magnitude of i gm should be between five and ten times i gt , which is shown on page 2. its duration (t p1 ) should be 20s or sufficient to allow the anode current to reach ten times i l , whichever is greater. otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. the ?back-porch? current i g should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times i gt .
ixys thyristor/diode module types m##500-12io1 and m##500-18io1 rating report. types m##500-12io1 and m##500-18io1 issue 2 page 4 of 11 march, 2005 8.0 computer modelling parameters 8.1 thyristor dissipation calculations t av t t t av r ff w r ff v v i ? ? ? ? ? + + ? = 2 2 2 0 0 2 4 and: k j th av t t t r t w ? = ? ? = max where v t0 = 0.85 v, r t = 0.27 m ? for the thyristor and v t0 = 0.72 v, r t = 0.143 m ? for the diode. r th = supplementary thermal impedance, see table below and ff = form factor, see table below. supplementary thermal impedance conduction angle 30 60 90 120 180 270 d.c. square wave 0.07067 0.06791 0.06629 0.06525 0.06395 0.06277 0.062 sine wave 0.06767 0.06536 0.06408 0.0633 0.062 form factors conduction angle 30 60 90 120 180 270 d.c. square wave 3.464 2.449 2 1.732 1.414 1.149 1 sine wave 3.98 2.778 2.22 1.879 1.57 8.2 calculating thyristor v t using abcd coefficients the on-state characteristic i t vs. v t , on page 6 is represented in two ways; (i) the well established v t0 and r t tangent used for rating purposes and (ii) a set of constants a, b, c, d, forming the coefficients of the representative equation for v t in terms of i t given below: () t t t t i d i c i b a v ? + ? + ? + = ln the constants, derived by curve fitting software, are given below for both hot and cold characteristics. the resulting values for v t agree with the true device characteristic over a current range, which is limited to that plotted. 25c coefficients 125c coefficients a 0.7860338 a -0.099137717 b 9.92906210 -3 b 0.1987038 c 1.9470410 -4 c 4.2381210 -4 d 7.40921310 -3 d -0.01453705
ixys thyristor/diode module types m##500-12io1 and m##500-18io1 rating report. types m##500-12io1 and m##500-18io1 issue 2 page 5 of 11 march, 2005 8.3 d.c. thermal impedance calculation = = ? ? ? ? ? ? ? ? ? ? ? = n p p t p t p e r r 1 1 where p = 1 to n n = number of terms in the series and t = duration of heating pulse in seconds. r t = thermal resistance at time t. r p = amplitude of p th term. p = time constant of r th term). the coefficients for this device are shown in the tables below: d.c. term 1234 r p 0.05428 4.489410 -3 2.338210 -3 8.75910 -4 p 2.69428 0.126017 0.013878 1.43510 -3 9.0 reverse recovery ratings (i) q ra is based on 50% i rm chord as shown in fig. 1 fig. 1 (ii) q rr is based on a 150 s integration time i.e. = s rr rr dt i q 150 0 . (iii) 2 1 t t factor k =
ixys thyristor/diode module types m##500-12io1 and m##500-18io1 rating report. types m##500-12io1 and m##500-18io1 issue 2 page 6 of 11 march, 2005 thyristor curves figure 1 - on-state characteristics of limit device figure 2 - transient thermal impedance 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 instantaneous on-state voltage - v tm (v) instantaneous on-state current - i tm (a) t j = 125c t j = 25c 0.00001 0.0001 0.001 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 time (s) thermal impedance (k/w) single thyristor figure 3 - gate characteristics - trigger limits figure 4 - gate characteristics - power curves 0 1 2 3 4 5 6 7 8 0 0.2 0.4 0.6 0.8 1 gate trigger current - i gt (a) gate trigger voltage - v gt (v) i gd , v gd i gt , v gt min v g dc max v g dc t j =25c 125c 25c -10c -40c 0 5 10 15 20 25 30 35 0246810 gate trigger current - i gt (a) gate trigger voltage - v gt (v) p g 4w dc p g max 30w dc min v g dc max v g dc t j =25c m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2
ixys thyristor/diode module types m##500-12io1 and m##500-18io1 rating report. types m##500-12io1 and m##500-18io1 issue 2 page 7 of 11 march, 2005 figure 5 - total recovered charge, q rr figure 6 - recovered charge, q ra (50% chord) 1000 10000 1 10 100 1000 di/dt (a/s) recovered charge - q rr (c) t j =125c 1500a 2000a 1000a 500a 1000 10000 1 10 100 1000 di/dt (a/s) recovered charge - q ra , 50% chord (c) 500a t j =125c 1000a 2000a 1500a figure 7 - peak reverse recovery current, i rm figure 8 - maximum recovery time, t rr (50% chord) 100.00 1000.00 1 10 100 1000 di/dt (a/s) reverse recovery current - i rm (a) 2000a 1500a 1000a 500a t j =125c 1 10 100 1 10 100 1000 di/dt (a/s) reverse recovery time (50% chord) - t rr (s) 2000a 1500a 1000a 500a t j =125c m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2
ixys thyristor/diode module types m##500-12io1 and m##500-18io1 rating report. types m##500-12io1 and m##500-18io1 issue 2 page 8 of 11 march, 2005 figure 9 - on-state current vs. power dissipation - sine wave figure 10 - on-state current vs. heatsink temperature - sine wave 0 200 400 600 800 1000 1200 1400 1600 1800 0 200 400 600 800 1000 mean forward current (a) (whole cycle averaged) maximum forward dissipation (w) 30 60 90 120 180 0 20 40 60 80 100 120 140 0 200 400 600 800 1000 mean forward current (a) (whole cycle averaged) maximum permissable heatsink temperature (c) 30 60 90 120 180 figure 11 - on-state current vs. power dissipation - square wave figure 12 - on-state current vs. heatsink temperature - square wave 0 200 400 600 800 1000 1200 1400 1600 1800 0 200 400 600 800 1000 1200 1400 mean forward current (amps) (whole cycle averaged) maximum forward dissipation (w) d.c. 270 180 120 90 60 30 0 20 40 60 80 100 120 140 0 200 400 600 800 1000 1200 1400 mean forward current (amps) (whole cycle averaged) maximum permissible heatsink temperature (c) 30 60 90 120 180 d.c. 270 m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2
ixys thyristor/diode module types m##500-12io1 and m##500-18io1 rating report. types m##500-12io1 and m##500-18io1 issue 2 page 9 of 11 march, 2005 figure 13 - maximum surge and i 2 t ratings 1000 10000 100000 total peak half sine surge current (a) 1.00e+05 1.00e+06 1.00e+07 maximum i 2 t (a 2 s) 1 3 510 1 510 50100 duration of surge (ms) duration of surge (cycles @ 50hz) i 2 t: 60% v rrm i tsm : 60% v rrm i 2 t: v rrm 10v i tsm : v rrm 10v t j (initial) = 125c gate may temporarily lose control of conduction angle diode curves figure 14 - instantaneous forward voltage v f figure 15 - transient thermal impedance 100 1000 10000 00.511.52 maximum instantaneous forward voltage - v fm (v) instantaneous forward current - i fm (a) 125c 25c 0.000001 0.00001 0.0001 0.001 0.01 0.1 1e-05 0.0001 0.001 0.01 0.1 1 10 100 time (s) thermal impedance (k/w) single diode m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2
ixys thyristor/diode module types m##500-12io1 and m##500-18io1 rating report. types m##500-12io1 and m##500-18io1 issue 2 page 10 of 11 march, 2005 figure 16 - total recovered charge, q rr figure 17 - recovered charge, q ra (50% chord) 1000 10000 1 10 100 1000 di/dt (a/s) recovered charge - q rr (c) t j =125c 1500a 2000a 1000a 500a 1000 10000 1 10 100 1000 di/dt (a/s) recovered charge - q ra , 50% chord (c) t j =125c 2000a 1500a 1000a 500a figure 18 - peak reverse recovery current, i rm figure 19 - maximum recovery time, t rr (50% chord) 100.00 1000.00 10000.00 1 10 100 1000 di/dt (a/s) reverse recovery current - i rm (a) 2000a 1500a 1000a 500a t j =125c 1 10 100 1 10 100 1000 di/dt (a/s) reverse recovery time (50% chord) - t rr (s) 2000a 1500a 1000a 500a t j =125c m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2 m##500-12io1-18io1 issue 2
ixys thyristor/diode module types m##500-12io1 and m##500-18io1 rating report. types m##500-12io1 and m##500-18io1 issue 2 page 11 of 11 march, 2005 outline drawing & ordering information ordering information (please quote 11 digit code as below) m ## 500 io 1 fixed type code configuration code cc, cd, dc, ca, ck, cda, dca average current rating voltage code v rrm /100 12-18 i = critical dv/dt 1000 v/s o = typical turn-off time fixed version code order code: mcd500-14io1? mcd configuration, 1400v v rrm ixys ixys semiconductor gmbh edisonstra?e 15 d-68623 lampertheim tel: +49 6206 503-0 fax: +49 6206 503-627 e-mail: marcom@ixys.de www.ixys.com westcode semiconductors ltd langley park way, langley park, chippenham, wiltshire, sn15 1ge. tel: +44 (0)1249 444524 fax: +44 (0)1249 659448 e-mail: wsl.sales@westcode,com westcode an ixys company ixys corporation 3540 bassett street santa clara ca 95054 usa tel: +1 (408) 982 0700 fax: +1 (408) 496 0670 e-mail: sales@ixys.net www.westc ode.com westcode semiconductors inc 3270 cherry avenue long beach ca 90807 usa tel: +1 (562) 595 6971 fax: +1 (562) 595 8182 e-mail: wsi.sales@westcode.com the information contained herein is confidential and is protected by copyright. the information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors i xys semic onductors gmbh. in the interest of product improvement, i xys reserves the right to c hange specifications at any time without prior notice. devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessar ily subject to the conditions and limits contained in this report. ? ixys semic onductor gmbh. 3671 542 mcc 31542 mcd 3671 2 mdc 37 6 1 5 4 2 mca 3 6 7 1 4 5 2 mck 31542 mcda 3 7 6 1 2 mdca

▲Up To Search▲

Price & Availability of MCK500-14IO1

	To Download MCK500-14IO1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .